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Technical Parameters of Protos Spacer (for Wafer use)ItemASTM American Society for Testing Materials ASTMGB Test standardUnitTest resultMelt indexD1238GB3682g/10min2.1Water absorptionD570GB/96-04-10%0.5Density/GB1033g/cm0.98Tensile strengthTD MDGB/96-04-10MPaTD:32.01 MD:33.75Breaking elongation rateTD MDGB/96-04-10%TD:702 MD:685Surface resistivity/GJB2605-1996 <1×10¹²Ω/square Ω/square105-9Friction coefficientOuter surfaceGB/96-04-10Us0.09 Inner surface Ud0.08Static dissipation5000-0VSJ/T10694-1996Sec.<2Heat seal temperature/GB/96-04-10F250-375Capacitance releaseE1A541SJ/T10694-1996V<15KV Voltage difference-E1A541 SizeGB/96-04-10Thickness 0.1±0.01mm Diameter (100~300)±2mmAppearanceGB/96-04-10No layering, wrinkles, warping, cracking, adhesion, foreign body attached
Technical Parameters of Protos Spacer (for Wafer use)
Item
ASTM American Society for
Testing Materials ASTM
GB Test standard
Unit
Test result
Melt index
D1238
GB3682
g/10min
2.1
Water absorption
D570
GB/96-04-10
%
0.5
Density
/
GB1033
g/cm
0.98
Tensile strength
TD MD
MPa
TD:32.01
MD:33.75
Breaking elongation rate
TD:702
MD:685
Surface resistivity
GJB2605-1996 <1×10¹²Ω/square
Ω/square
105-9
Friction coefficient
Outer surface
Us
0.09
Inner surface
Ud
0.08
Static dissipation
5000-0V
SJ/T10694-1996
Sec.
<2
Heat seal temperature
F
250-375
Capacitance release
E1A541
V
<15KV Voltage difference-E1A541
Size
Thickness 0.1±0.01mm Diameter (100~300)±2mm
Appearance
No layering, wrinkles, warping, cracking, adhesion, foreign body attached
Si Wafer Backgrinding
Dicing / Back Grinding
List price:0.00
Price:0.00
Silicon Ingots/Parts
Spacer for Wafer use
Consumables