4H N-TYPE Sic, 100MM, 350um WAFER SPECIFICATION
Artic le Number	W4H100N-4-PO(or CO)-350
Description	4H Sic Substrate
Polytype	4H
Diameter	(100+0.0-0.5)mm
Thickness	(350+25)um(Engineering grade+50um)
Carrier Type	n-type
Dopant	Nitrogen
Resistivity(RT)	0.012-0.0250-cm(Engineering grade<0.0250-cm)
Wafer Orientatio	(4+0.5)°
	Engineering grade	Production Grade	Production Grade
	2.1	2.2	2.3
Micropipe Density	≤30cm-²	≤10cm-²	≤1cm-²
Micropipe Free area	Not specified	≥96%	≥96%
Orientation flat(OF)
Orientation	Parallel{1-100}±5°
Orientation flat length	(32.5±2.0)mm
Identification flat (IF)
Orientation	Si-face:90° cw. from orientation flat±5°
Identification flat length	(18.0+2.0)mm
Surface	Option1: Si-face standard polish Epi-ready C-face optical polish
	Option2: Si-face CMP Epi-ready, C-face optical polish
Package	multiple wafer(25)shipping box (single wafer package upon request)

6H N-TYPE SIC 2 WAFER SPECIFICATION
Artic le Number	W6HS1N-0-PM-250-S
Descrption	Production Grade 6H SiC Substrate
Polytype	6H
Diameter	(50.8±38)mm
Thickness	(250±25)um
Carrier Typen	n-type
Dopant	Nitrogen
Resistivity(RT)	0.6-0.10Ω.cm
Wafer Orientation	(0+0.5)°
Micropipe Density	≤100cm-²
Orientation flat orientation	parallel{1-100}±5°
Orientation flat length	(15.88±1.65)mm
Identification flat orientation	Si-face:90°cw. frow orientation flat±5°
Identification flat lenath	(8+1.65)mm
Surface	Si-face standard polish Epi-ready
	C-face matted
Package	Package single wafer package or multiple wafer shipping box