| Oxide Layer Thickness
| Standard – .5μm, 1μm, and 2μm
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| Optional – .1 – 10μm
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| Handle Wafer Thickness
| 3”, 100mm – 300μm and up
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| 125 mm, 150mm – 400μm and up
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| 200mm – 500μm and up
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| Tolerance: Standard +/- 25μm
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| Special +/- 5μm
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| Dopants
| N type – Phosphorous, Arsenic, and Antimony
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| P Type – Boron
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| Resistivities
| Most resistivities available on request including high resistivity Float Zone
and low resistivity CZ
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| Orientation
| <1-0-0> Standard, <1-1-1> and <1-1-0> Optional on request
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| Standard tolerance +/- .5 degree
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| Special tolerance as low as +/- .1 degree
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| Flat Orientation
| All major flats/Notches are on the <110> Plane +/-.5 degree
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| Tighter specificatioin available upon request
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| Semi std minor flats are standard on 76.2 and 100mm
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| Finish
| Double side polished standard
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| Optional backside finishes – nano grind or oxide
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| Coatings
| Oxide and nitride can be supplied on both sides of the wafer.
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| Optional Ion Implanted Buried Layer
| A buried layer can be implanted in the active layer at the bonding interface. Please check to see if your desired dopant, dopant concentration, and desired energies are available.This service is provided by an outside contractor.
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